BSC016N06NSTATMA1 vs BSC097N06NSATMA1 对比
详细并排对比 BSC016N06NSTATMA1 出自 Infineon 和 BSC097N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC016N06NSTATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 | — |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 | OptiMOS 5 (Trench) |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封装 | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (Unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | OptiMOS | OptiMOS 5 |
| Part Status | — | Active |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| 工作结温 | — | -55C to +150C |
| 封装 / 外壳 | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |