BSC020N03LSGATMA1 vs BSC010N04LSATMA1 对比

详细并排对比 BSC020N03LSGATMA1 出自 Infineon 和 BSC010N04LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ 量产中

规格对比

参数 BSC020N03LSGATMA1 BSC010N04LSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) —
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
工作温度范围 -55 C to +150 C (junction) -55C to +150C
封装 / 外壳 PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel —
RoHS 状态 Compliant —
MSL 等级 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Transistor Polarity — N-Channel
Drain-Source Breakdown Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 38 A
On-Resistance RDS(on) Max @ VGS=10V — 1.0 mOhm
On-Resistance RDS(on) Test Condition — VGS = 10 V, ID = 50 A
Gate Threshold Voltage VGS(th) Typ — 2 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 139 W
Power Dissipation (Ta=25C) — 2.5 W
封装 — PG-TDSON-8 FL (SuperSO8 5x6)
RoHS / Halogen-Free — RoHS compliant, halogen-free
Technology — OptiMOS 5
Avalanche Rated — 100% avalanche tested

数据手册与资源

浏览全部产品 创建 BOM 获取报价