BSC020N03LSGATMA1 vs BSC010N04LSATMA1 비교

다음의 상세 나란히 비교: BSC020N03LSGATMA1 제조: Infineon 및 BSC010N04LSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ 활성

사양 비교

파라미터 BSC020N03LSGATMA1 BSC010N04LSATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.42 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) —
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
동작 온도 범위 -55 C to +150 C (junction) -55C to +150C
패키지 / 케이스 PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel —
RoHS 상태 Compliant —
MSL 레벨 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Transistor Polarity — N-Channel
Drain-Source Breakdown Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 38 A
On-Resistance RDS(on) Max @ VGS=10V — 1.0 mOhm
On-Resistance RDS(on) Test Condition — VGS = 10 V, ID = 50 A
Gate Threshold Voltage VGS(th) Typ — 2 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 139 W
Power Dissipation (Ta=25C) — 2.5 W
패키지 — PG-TDSON-8 FL (SuperSO8 5x6)
RoHS / Halogen-Free — RoHS compliant, halogen-free
Technology — OptiMOS 5
Avalanche Rated — 100% avalanche tested

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