BSC023N08NS5SCATMA1 vs BSC0902NSIATMA1 对比

详细并排对比 BSC023N08NS5SCATMA1 出自 Infineon 和 BSC0902NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC023N08NS5SCATMA1 BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 ✓ 量产中

规格对比

参数 BSC023N08NS5SCATMA1 BSC0902NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $0.32
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 202 A —
Power Dissipation (PD, Tc=25°C) 188 W —
On-State Resistance RDS(on) typ. 2.3 mΩ at VGS=10 V, ID=50 A —
Gate Threshold Voltage VGS(th) typ. 3.8 V —
Total Gate Charge Qg 98 nC at VGS=10 V —
Input Capacitance Ciss 6.8 nF —
Output Capacitance Coss 74 pF —
Thermal Resistance RthJC 0.72 K/W —
工作结温 -55 °C to +175 °C —
封装 PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8-6 (TDSON-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
工作温度范围 — -55C to +150C (junction)
Built-in Diode — Yes (single with built-in diode)
MSL 等级 — [DATA_NEEDED: MSL rating]
Lead-Free — Yes
无卤 — Yes

数据手册与资源

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