BSC027N10NS5ATMA1 vs BSC040N08NS5ATMA1 对比
详细并排对比 BSC027N10NS5ATMA1 出自 Infineon 和 BSC040N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC027N10NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.10 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | BSC040N08NS5ATMA1 |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| 封装 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | — | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | — | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 104 W |
| 工作结温 | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Primary Application | — | Synchronous rectification in telecom and server power supplies |