BSC028N06NSTATMA1 vs BSC016N06NSTATMA1 对比

详细并排对比 BSC028N06NSTATMA1 出自 Infineon 和 BSC016N06NSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 量产中
Infineon
BSC016N06NSTATMA1 BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 ✓ 量产中

规格对比

参数 BSC028N06NSTATMA1 BSC016N06NSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.40 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS 5
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
工作结温 -55C to +175C —
封装 PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
无卤 Yes —
MSL 等级 1 [DATA_NEEDED: MSL level]
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Part Number — BSC016N06NSTATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
工作温度范围 — -55 C to +150 C
Lead-Free — Yes

数据手册与资源

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