BSC028N06NSTATMA1 vs IPB081N06L3GATMA1 对比
详细并排对比 BSC028N06NSTATMA1 出自 Infineon 和 IPB081N06L3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC028N06NSTATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.40 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| MSL 等级 | 1 | 1 (unlimited) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| 工作温度范围 | — | -55 C to +175 C (junction) |
| 引脚数 | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |