BSC030N03LSGATMA1 vs BSC030N03MSGATMA1 对比
详细并排对比 BSC030N03LSGATMA1 出自 Infineon 和 BSC030N03MSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC030N03LSGATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 3M |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | — |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | — |
| RDS(on) Max @ VGS=10V | 3 mOhm | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | — |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | — |
| Output Charge (Qoss) | 66 pF | — |
| Input Capacitance (Ciss) Typ | 4.3 nF | — |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | — |
| Power Dissipation (Pd) @ Tc=25C | 69 W | — |
| 工作结温 | -55C to +150C | -55°C to +150°C |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Avalanche Rated | Yes (100% tested) | — |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |