BSC034N06NSATMA1 vs BSC0902NSATMA1 对比

详细并排对比 BSC034N06NSATMA1 出自 Infineon 和 BSC0902NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ 量产中

规格对比

参数 BSC034N06NSATMA1 BSC0902NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $0.78
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
工作温度范围 -55C to +150C -55C to +150C (Tj)
Technology OptiMOS 5 —
封装 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant —
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
无卤 — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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