BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
料号： BSC034N06NSATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
BSC034N06NSATMA1 概述
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for power conversion and amplification. N-channel MOSFETs conduct current when a positive gate-source voltage is applied. They are the foundational building block of synchronous buck converters, half-bridges, and full-bridges in switched-mode power supplies (SMPS). Within power electronics taxonomy, the BSC034N06NSATMA1 belongs to the discrete semiconductor hierarchy: MOSFET -> power MOSFET -> discrete semiconductor.
Key features include ultra-low RDS(on) of 3.4 mOhm at VGS=10 V, integrated Schottky-like monolithic body diode optimized for low Qrr, and a source-down package that shifts the die thermal path directly to the PCB for superior cooling. The OptiMOS 5 technology achieves an outstanding figure-of-merit (FOM = RDS(on) x Qg), reducing both conduction and switching losses.
The SuperSO8 (PG-TDSON-8-7) package exposes the source potential on the bottom of the die, allowing PCB copper to act as the primary heatsink. Combined with the OptiMOS 5 process, this enables higher continuous current, faster switching, and improved avalanche robustness in telecom, server, and automotive 48V applications.
Typical applications include DC-DC converters in server and telecom 48V bus systems, motor drives for e-mobility and robotics, battery management and protection in lithium-ion packs, synchronous rectification in telecom bricks, and hot-swap switches on 12V and 24V distribution rails.
When designing with this device, ensure VGS is driven to 10 V for full RDS(on) rating. Gate drive resistors of 5-10 ohm are recommended to control ringing; a small gate-source pull-down of 10-100 kOhm prevents inadvertent turn-on in half-bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating OptiMOS 5 in 60V systems, complementing the manufacturer datasheet with comparison data and decision guidance.
直接替换替代料： BSC034N06NSATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSC034N06NSATMA1 （相同外形与封装尺寸） ——差异在于 Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
快速对比工具——选择替代料号进行并排对比：
BSC027N06LS5ATMA1
✅ 直接替换✓ 有现货
$0.66 / 个
查看数据手册 →BSC066N06NSATMA1
✅ 直接替换✓ 有现货
$0.49 / 个
查看数据手册 →BSC0902NSATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →ISC011N03L5SATMA1
✅ 直接替换✓ 有现货
$0.47 / 个
查看数据手册 →IRLB8748PBF
✅ 直接替换✓ 有现货
$0.68 / 个
查看数据手册 →BSZ036NE2LSATMA1
✅ 直接替换✓ 有现货
$0.42 / 个
查看数据手册 →NTTFS006N60
✅ 直接替换📋 参考替代料（不在目录中）
BSC034N06NSATMA1 最大额定值与电气特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm |
| Power Dissipation at Ta=25C | 2.5 W |
| Power Dissipation at Tc=25C | 74 W |
| 工作温度范围 | -55C to +150C |
| Technology | OptiMOS 5 |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
BSC034N06NSATMA1 引脚配置
| 引脚 1 | GATE — Gate drive input |
| 引脚 2 | SOURCE — Source connection |
| 引脚 3 | SOURCE — Source connection |
| 引脚 4 | SOURCE — Source connection |
| 引脚 5 | SOURCE — Source connection |
| 引脚 6 | SOURCE — Source connection |
| 引脚 7 | SOURCE — Source connection |
| 引脚 8 | DRAIN — Drain connection |
安全工作区 (DC)
典型应用
BSC034N06NSATMA1 适用于 6 应用s: 48V Telecom Isolated DC-DC Brick, Server 12V Hot-Swap Switch, E-Mobility Motor Drive, Lithium-Ion Battery Management Protection, Synchronous Buck Converter Point-of-Load, Solar Micro-Inverter Power Stage.
48V Telecom Isolated DC-DC Brick
The BSC034N06NSATMA1 fits 48V telecom isolated DC-DC bricks on the secondary-side synchronous rectifier. Its 3.4 mOhm RDS(on) at VGS=10V minimizes conduction loss at 30-60 A secondary currents, and the 60V VDS rating provides adequate margin for 48V nominal rails with typical transient excursions. The SuperSO8 source-down package dissipates 2-3W continuously on 2oz copper without a heatsink, enabling compact quarter-brick and eighth-brick form factors used in central-office telecom equipment.
推荐
Server 12V Hot-Swap Switch
Hot-swap controllers on 12V server distribution rails require MOSFETs that handle inrush surges and continuous load. The BSC034N06NSATMA1 with 100 A continuous rating and 60V VDS handles 12V rails with substantial transient headroom. Its low RDS(on) reduces DC loss across the eFuse, improving server energy efficiency. The SuperSO8 package is footprint-compatible with standard hot-swap layouts and supports the paralleling required for 200-400 A rack PDUs.
推荐
E-Mobility Motor Drive
E-bike, e-scooter, and small EV traction motor drives in the 24V-60V battery class use the BSC034N06NSATMA1 in the half-bridge switching stage. Its 100A continuous drain current supports peak motor currents of 150-300 A through paralleling, while OptiMOS 5 technology provides fast switching (low Qgd/Qgs ratio) at PWM frequencies of 20-50 kHz. The SuperSO8 source-down package enables direct PCB cooling, critical in vibration-prone vehicle environments where air cooling is impractical.
推荐
Lithium-Ion Battery Management Protection
Lithium-ion battery packs at 24V-48V nominal use protection MOSFETs that disconnect the pack on overcurrent or short-circuit. The BSC034N06NSATMA1 serves as the high-side or low-side disconnect switch, with 100A continuous rating covering most e-mobility and small-EV applications. Its low RDS(on) reduces the voltage drop across the protection path during normal operation, extending battery runtime. The 60V VDS rating supports 13s Li-ion packs (54.6V full charge) with adequate transient margin.
推荐
Synchronous Buck Converter Point-of-Load
Point-of-load synchronous buck converters on 24V intermediate buses use the BSC034N06NSATMA1 as the high-side and low-side FET in the switching stage. Its OptiMOS 5 figure-of-merit enables high-frequency operation (300-500 kHz) with low switching loss, allowing smaller inductors and capacitors. The 60V VDS rating handles 24V industrial bus inputs with substantial derating margin for transients on factory automation power rails.
推荐
Solar Micro-Inverter Power Stage
Residential solar micro-inverters converting 30-50V panel output use the BSC034N06NSATMA1 in the push-pull primary stage. Its 60V rating matches panel open-circuit voltages at low temperature extremes, while the 3.4 mOhm RDS(on) maximizes inverter efficiency above 97%. OptiMOS 5 technology reduces switching loss at the 50-100 kHz operating frequency typical of micro-inverters, and the SuperSO8 package fits the compact, potted enclosures used for outdoor installations.
推荐
推荐产品汇总
工程参考数据： BSC034N06NSATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSC027N06LS5ATMA1 | BSC066N06NSATMA1 | BSC0902NSATMA1 | NTTFS006N60 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) - same | PG-TDSON-8-7 (SuperSO8) - same | PG-TDSON-8-7 (SuperSO8) - same | WDFN-8 (3.3x3.3 mm) - similar pin |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | onsemi - cross-brand |
| VDS max | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) max at 10V | 3.4 mOhm | 2.7 mOhm (-21%) | 6.6 mOhm (+94%) | 9.0 mOhm (+165%) | 6.0 mOhm (+76%) |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi advanced planar |
关键差异点
- Lowest RDS(on) in 60V SuperSO8 family at 3.4 mOhm （对比 BSC066N06NSATMA1)
- Higher current rating vs competing WDFN-8 parts （对比 NTTFS006N60 (onsemi))
- OptiMOS 5 figure-of-merit enables high-frequency operation （对比 BSZ036NE2LSATMA1 (25V OptiMOS 5))
设计说明
Estimated: at ID=30 A continuous with VGS=10V and RDS(on)=3.4 mOhm, conduction loss is approximately 3.1 W. SuperSO8 (PG-TDSON-8-7) with source-down construction dissipates heat primarily through the PCB copper. Use at least 2oz copper on the source pad with 100-200 mm^2 copper area to keep junction rise below 50C. For continuous currents above 50 A, add thermal vias to inner copper planes.
Place the gate drive trace away from the drain switching node to minimize dv/dt-induced gate coupling. Keep gate loop area under 5x5 mm to control ringing. Use 5-10 ohm gate series resistors; lower values increase EMI, higher values slow switching. Add a 10-100 kOhm gate-source pull-down to prevent inadvertent turn-on in half-bridge topologies during startup or fault conditions.
Do not operate the gate above +/-20 V VGS - the thin gate oxide of OptiMOS 5 is sensitive to overvoltage. Always sequence the gate drive after the source connection is established. When paralleling multiple BSC034N06NSATMA1 devices, use individual gate resistors and matched source Kelvin connections to ensure current sharing; small PCB layout asymmetries otherwise cause thermal runaway.
Use multiple thermal vias (0.3 mm drill, 0.5 mm pitch) under the source pad of PG-TDSON-8-7 to connect top copper to internal ground/power planes. Vias should be filled or capped for improved thermal conductivity. Avoid placing signal traces under the package to maximize continuous copper for heat spreading. Source-down construction requires the top copper to be the primary thermal path.
合规信息
RoHS and REACH compliance per Infineon product page; not AEC-Q100 qualified (industrial-grade part); halogen-free status not stated in the verified data.
