BSC036NE7NS3GATMA1 vs IAUZ40N06S5L050ATMA1 对比

详细并排对比 BSC036NE7NS3GATMA1 出自 Infineon 和 IAUZ40N06S5L050ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ40N06S5L050ATMA1 IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5L050ATMA1 ✓ 量产中

规格对比

参数 BSC036NE7NS3GATMA1 IAUZ40N06S5L050ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.71
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V —
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
工作温度范围 -55C to +175C —
封装 PG-TDSON-8-7 (5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 ROHS3 Compliant Compliant
MSL 等级 1 —
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
工作结温 — -55 °C to +175 °C
Technology — OptiMOS 5 (super-junction N-channel)
Automotive Qualification — AEC-Q100 qualified

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