BSC042NE7NS3GATMA1 vs BSC047N08NS3GATMA1 对比
详细并排对比 BSC042NE7NS3GATMA1 出自 Infineon 和 BSC047N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC042NE7NS3GATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.24 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | BSC047N08NS3GATMA1 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 3 | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Ta | 19 A | 18 A |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| 工作温度范围 | -55C to +150C | -55 °C to +175 °C (Tj) |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | — |
| Drain-Source Voltage (VDS) max | — | 80 V |
| On-Resistance RDS(on) max | — | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | — | 125 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| Avalanche Rated | — | 100% tested |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |