BSC042NE7NS3GATMA1 vs BSC047N08NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
BSC042NE7NS3GATMA1 β Active
Specification Comparison
| Parameter | BSC042NE7NS3GATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.24 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | BSC047N08NS3GATMA1 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 3 | OptiMOSβ’ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at Ta | 19 A | 18 A |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| RDS(on) max at VGS=10V | 4.2 mOhm | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +175 Β°C (Tj) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS Status | Compliant | β |
| Drain-Source Voltage (VDS) max | β | 80 V |
| On-Resistance RDS(on) max | β | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | β | 125 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Gate Threshold Voltage (VGS th) | β | Normal level (typ 1.7 V) |
| Avalanche Rated | β | 100% tested |
| RoHS / Halogen-Free | β | RoHS compliant, Halogen-free |