BSC047N08NS3GATMA1 vs BSC016N06NSATMA1 对比

详细并排对比 BSC047N08NS3GATMA1 出自 Infineon 和 BSC016N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ 量产中
Infineon
BSC016N06NSATMA1 BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 ✓ 量产中

规格对比

参数 BSC047N08NS3GATMA1 BSC016N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.46 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 —
Technology OptiMOS™ 3 (N-channel trench) OptiMOS™ 5
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 18 A —
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V —
Power Dissition (Tc) 125 W —
Power Dissipation (Ta) 2.5 W —
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) —
Avalanche Rated 100% tested —
封装 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +175 °C (Tj) -55 °C to +150 °C
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
MSL 等级 — 1 (unlimited)
RoHS 状态 — Compliant
Gate Drive (recommended) — 10 V

数据手册与资源

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