BSC0504NSIATMA1 vs IPD090N03LGATMA1 对比

详细并排对比 BSC0504NSIATMA1 出自 Infineon 和 IPD090N03LGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ 量产中

规格对比

参数 BSC0504NSIATMA1 IPD090N03LGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.34
晶体管类型 N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 OptiMOS 30V
封装 PG-TDSON-8-6 PG-TO252-3-11 (DPAK)
安装类型 Surface Mount Surface Mount
引脚数 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
栅极阈值电压 [DATA_NEEDED: gate threshold voltage] —
热阻 [DATA_NEEDED: thermal resistance] —
工作温度范围 [DATA_NEEDED: operating temperature range] -55C to +175C (junction)
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
RoHS 状态 unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 40 A
Continuous Drain Current (Id) @ Tc=100C — [DATA_NEEDED: Id at 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Id]
Maximum Power Dissipation (Pd) @ Tc=25C — 42 W
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A — 9 mOhm (typical)
On-State Resistance (Rds(on)) @ Vgs=4.5V — [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
MSL 等级 — 1 (unlimited)
Configuration — Single

数据手册与资源

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