Infineon

BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching

料号: BSC0504NSIATMA1 ✓ 量产中
有现货 1-3 个工作日内发货
30 V Vdss 21 A Id PG-TDSON-8-6 Package
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价格更新于: 2026-09-10
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ℹ️ 所有价格均以 USD 计价

BSC0504NSIATMA1 概述

Infineon BSC0504NSIATMA1 is an N-channel power MOSFET rated for 30 V, with continuous drain current of 21 A at case temperature Ta and 72 A at Tc, and power dissipation of 2.5 W at Ta and 30 W at Tc. It uses an OptiMOS 5 30 V architecture in the surface-mount PG-TDSON-8-6 package. The verified distributor data identifies it as a single N-channel MOSFET designed for high-efficiency power switching.

A power MOSFET is a voltage-controlled transistor used to switch or conduct current in power-conversion and motor-control circuits. The N-channel designation means conduction occurs between its drain and source terminals when a positive gate-to-source voltage is applied. Within the hierarchy, the device belongs to the MOSFET family, the broader transistor category, and the power-semiconductor product class. Its low-voltage, high-current construction targets applications requiring compact switching stages and low conduction losses.

The verified headline ratings include a 30 V drain-to-source rating, 21 A at Ta, 72 A at Tc, 2.5 W dissipation at Ta, and 30 W at Tc. The package is identified by distributor listings as PG-TDSON-8-6, a surface-mount package with an exposed-pad description in the marketplace record. The part is associated with Infineon’s OptiMOS 5 25 V and 30 V product family, which is aimed at high power density and energy efficiency.

BSC0504NSIATMA1 is intended for applications such as synchronous rectification, DC-DC conversion, load switching, and power-management circuits. The 30 V class makes it suitable for low-voltage rails and point-of-load designs where a compact N-channel switch is required. Because the supplied data confirms the package identity and current/power ratings but does not provide a complete datasheet table, parameters such as on-resistance, gate charge, threshold voltage, and thermal resistance require separate datasheet verification.

Designers should verify the complete manufacturer datasheet before selecting the part for a particular gate-drive voltage, switching frequency, or thermal layout. The exposed-pad package and the substantial difference between Ta and Tc ratings indicate that PCB copper, thermal vias, and system cooling can strongly affect achievable load current. Current and power values should therefore be interpreted according to the manufacturer’s application conditions rather than as unrestricted universal limits.

This page combines verified distributor specifications, official Infineon datasheet access, pricing and stock information, drop-in-comparison guidance, and practical design notes. It is intended to support component identification and preliminary engineering evaluation while clearly separating verified values from parameters that still require datasheet confirmation.

直接替换替代料: BSC0504NSIATMA1 ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: BSC0504NSIATMA1 (相同外形与封装尺寸) ——差异在于 Package, Technology, Operating Temperature Range, MSL Level, Operating Junction Temperature.

Infineon
Package: PG-TDSON-8-7 (Surface Mount)
MSL Level: 1 (per JEDEC J-STD-020)
Operating Junction Temperature: -55 °C to +150 °C
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-17 (SuperSO8 5x6 mm)
Technology: OptiMOS 5 (shielded-gate trench)
Operating Temperature Range: -55C to +150C
对比 BSC0504NSIATMA1 →
Infineon
Package: SuperSO8 5x6 (PG-TSON-8-3)
Technology: OptiMOS 5 (N-channel trench)
MSL Level: MSL 1 (per JEDEC J-STD-020)
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-1 (SuperSO8 5x6)
Technology: OptiMOS 3 (Trench)
Operating Temperature Range: -55°C to +150°C
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-7 (SuperSO8 5x6 mm)
Technology: OptiMOS 5
MSL Level: 1 (per JEDEC J-STD-020)
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-6 (SuperSO8 5x6 mm)
Technology: OptiMOS 6 (N-channel MOSFET)
Operating Temperature Range: -55C to +150C
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-4 (5x6 mm)
MSL Level: 1
Operating Junction Temperature: -55C to +150C
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Technology: OptiMOS™ (N-Channel Trench MOSFET)
Operating Temperature Range: -55C to +150C
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8-34 (5x6 mm)
Technology: OptiMOS 5 Trench
Operating Temperature Range: -55 C to +175 C (T_j)
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TDSON-8 (SSO8) 5x6 mm
Technology: OptiMOS 6 (trench)
MSL Level: 1 (per JEDEC J-STD-020)
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-TO252-3-11 (DPAK)
Operating Temperature Range: -55C to +175C (junction)
MSL Level: 1 (unlimited)
对比 BSC0504NSIATMA1 →
Infineon
Package: PG-HSOF-8-1 (TOLL)
Technology: OptiMOS 5 (N-channel trench MOSFET)
Operating Temperature Range: -55 C to +175 C (TJ)
对比 BSC0504NSIATMA1 →

快速对比工具——选择替代料号进行并排对比:

BSC059N04LS6ATMA1

✅ 直接替换
Infineon
📦 PG-TDSON-8-6
OptiMOS 6 (N-channel MOSFET) · 40 V · 17 A · 49 A · 59 A · 5.9 mOhm at VGS=10 V · 3 W · 38 W

✓ 有现货

$0.74 / 个

查看数据手册 →

BSC014N06NSATMA1

✅ 直接替换
Infineon
📦 PG-TDSON-8-6
Infineon Technologies · OptiMOS 5 · N-Channel MOSFET · 60 V · +/- 20 V · 30 A · 100 A

✓ 有现货

$0.89 / 个

查看数据手册 →

BSZ060NE2LSATMA1

✅ 直接替换
Infineon
📦 PG-TDSON-8-6
Infineon Technologies · BSZ060NE2LSATMA1 · OptiMOS™ (N-Channel Trench MOSFET) · 25 V · 12 A · 44 A · 44 A · 6 mOhm

✓ 有现货

$0.27 / 个

查看数据手册 →

IPT007N06NATMA1

✅ 直接替换
Infineon
📦 PG-TDSON-8-6
OptiMOS 5 (N-channel trench MOSFET) · 60 V · 300 A · 0.75 mOhm · 375 W · -55 C to +175 C (TJ)

✓ 有现货

$2.84 / 个

查看数据手册 →

IPD090N03LGATMA1

✅ 直接替换
Infineon
📦 PG-TDSON-8-6
N-Channel · 30 V · 40 A · 42 W · 9 mOhm (typical)

✓ 有现货

$0.34 / 个

查看数据手册 →

BSC0504NSIATMA1 最大额定值与电气特性

晶体管类型 N-channel MOSFET
Drain-to-Source Voltage 30 V
Continuous Drain Current at Ta 21 A
Continuous Drain Current at Tc 72 A
Power Dissipation at Ta 2.5 W
Power Dissipation at Tc 30 W
Technology Family OptiMOS 5
封装 PG-TDSON-8-6
安装类型 Surface Mount
引脚数 8 pins
Exposed Pad Yes, according to distributor package description
RoHS 状态 unknown
Lead-Free Status unknown
Halogen-Free Status unknown
REACH Status unknown

BSC0504NSIATMA1 pg-tdson-8-6 引脚配置指南

BSC0504NSIATMA1(pg-tdson-8-6 封装)的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装,请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。

BSC0504NSIATMA1 的 pg-tdson-8-6 封装引脚图

暂无详细引脚数据: BSC0504NSIATMA1.

请参阅 数据手册 以查看完整引脚配置。

安全工作区

直流连续工作

典型应用

BSC0504NSIATMA1 适用于 6 应用s: Synchronous Rectification, DC-DC Converter Switching Stage, Load Switching, Power-Management Rail Control, Compact Motor Drive, High-Density Power Conversion.

⚡

Synchronous Rectification

BSC0504NSIATMA1 can be evaluated as the low-side N-channel switch in a synchronous-rectification stage, where its verified 30 V drain-to-source rating is appropriate for low-voltage converter outputs. The 21 A Ta and 72 A Tc current figures provide different thermal reference points for comparing conduction and cooling requirements. Use the exposed-pad PG-TDSON-8-6 package to spread heat into the PCB, but confirm body-diode behavior, gate-drive voltage, switching losses, and the safe operating area in the official datasheet before production. The candidate is most attractive when the design benefits from a compact OptiMOS 5 device and a tightly controlled low-voltage rail.

🔧

DC-DC Converter Switching Stage

BSC0504NSIATMA1 fits evaluation in non-isolated DC-DC converter stages operating from low-voltage input rails. Its verified 30 V rating addresses the main drain-voltage class, while the 21 A Ta and 72 A Tc ratings give engineers separate ambient and case-condition benchmarks. Place the device in a synchronous buck or other low-voltage switching topology only after checking the complete manufacturer switching data, including on-resistance, gate charge, switching times, and thermal resistance. PCB layout should minimize high-current loop inductance, keep the gate loop compact, and use the exposed pad with suitable copper and thermal vias.

⚡

Load Switching

BSC0504NSIATMA1 is a candidate for electronic load switching where a controlled N-channel MOSFET must carry or interrupt current on a 30 V-class rail. The verified ratings include 21 A at Ta and 72 A at Tc, but the actual usable current depends on conduction loss, switching frequency, duty cycle, ambient temperature, and PCB thermal design. A low-side load switch can use the device to provide a compact power-path element, while a high-side arrangement requires a suitable gate-drive architecture and protection strategy. Confirm gate threshold, on-resistance, absolute maximum ratings, and the exact PG-TDSON-8-6 pin assignment before schematic release.

🔋

Power-Management Rail Control

BSC0504NSIATMA1 can serve as a compact N-channel pass or switching element in a low-voltage power-management rail. Its 30 V rating is relevant to systems where the drain node remains within the verified voltage class, and the 2.5 W Ta and 30 W Tc power figures help establish thermal comparison points. The device should be selected only after checking the datasheet’s on-resistance and safe operating area, since those parameters are not included in the supplied verified data. Use a Kelvin-connected gate-drive path, local bypassing, and a defined thermal copper area to preserve switching performance and avoid hot-spot concentration.

🛞

Compact Motor Drive

BSC0504NSIATMA1 may be evaluated in compact low-voltage motor-drive stages, including brushed-motor or low-voltage H-bridge applications, where the verified 30 V rating matches the intended bus class. The 21 A Ta and 72 A Tc ratings show why thermal mounting and current derating are central to the design, while the PG-TDSON-8-6 package helps keep the power stage compact. Motor circuits add inductive voltage transients, so verify avalanche or safe operating area behavior, gate protection, current sensing, and thermal limits in the official datasheet. A redesign using a higher-voltage part may be needed if regenerative or switching overshoot exceeds the 30 V class.

🏭

High-Density Power Conversion

BSC0504NSIATMA1 is appropriate for preliminary evaluation in high-density power-conversion layouts that require a surface-mount N-channel MOSFET in the PG-TDSON-8-6 package. The verified 30 V rating and OptiMOS 5 family association support low-voltage design goals, while the 2.5 W Ta and 30 W Tc ratings provide a practical starting point for thermal analysis. Designers should confirm the missing on-resistance, gate-charge, switching, and thermal-resistance values before optimizing efficiency. Pair the MOSFET with a short gate loop, a local gate resistor, appropriate snubbing where needed, and a thermal design that accounts for the difference between ambient and case-temperature conditions.

What is BSC0504NSIATMA1?
BSC0504NSIATMA1 is an Infineon N-channel power MOSFET in the OptiMOS 5 family. According to the verified distributor data, it is rated for 30 V and is supplied in a surface-mount PG-TDSON-8-6 package. It is intended for power-switching applications requiring a low-voltage N-channel transistor.
What are the key specifications of BSC0504NSIATMA1 that engineers should know?
The key verified specifications are a 30 V drain-to-source rating, 21 A continuous drain current at Ta, 72 A at Tc, 2.5 W dissipation at Ta, and 30 W at Tc. The part is an N-channel MOSFET using Infineon OptiMOS 5 technology and a surface-mount PG-TDSON-8-6 package.
What is the maximum drain current of BSC0504NSIATMA1?
The verified maximum current ratings are 21 A at Ta and 72 A at Tc. The two conditions are not interchangeable because Ta and Tc represent different thermal reference points. Designers should apply the manufacturer’s current derating curves and confirm the final limit against the official datasheet.
What package does BSC0504NSIATMA1 use?
BSC0504NSIATMA1 uses the PG-TDSON-8-6 surface-mount package, verified by DigiKey’s product listing. The package is associated with an exposed-pad description in the distributor record. Before PCB release, verify the exact land pattern and exposed-pad connection against the official Infineon datasheet.
Where can I download the BSC0504NSIATMA1 datasheet PDF?
The official Infineon datasheet PDF is available at the manufacturer URL listed in the verified web data: https://www.infineon.com/assets/row/public/documents/24/49/infineon-bsc0504nsi-ds-en.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d. The PDF should be used to confirm switching characteristics, safe operating limits, and the complete pin assignment.
Where to buy BSC0504NSIATMA1 online?
BSC0504NSIATMA1 can be sourced through the distributor channels listed in the verified search results, including DigiKey, Mouser, Octopart, Xecor, Wolfchip, and Nantian. DigiKey’s listing states “Buy now, ships today,” but inventory and availability can change. Check the live distributor page before placing an order.
What is the price of BSC0504NSIATMA1?
The verified search data does not provide a reliable price value for BSC0504NSIATMA1. A current quote must be obtained from the selected authorized distributor, and pricing should be stated as of 2026-09-10 when available. Quantity, packaging, and distributor inventory can materially affect the unit price.
What is the lead time for BSC0504NSIATMA1?
The verified DigiKey result says the part ships today, while other distributor records indicate immediate or current availability. These statements are time-sensitive and do not guarantee a fixed lead time. Confirm current stock, order cutoff, and delivery timing directly with the distributor as of 2026-09-10.
Is BSC0504NSIATMA1 in stock?
DigiKey’s verified listing states “Buy now, ships today,” and Wolfchip reports in stock as of 2026-09-10. Stock can change rapidly after verification, so buyers should treat the distributor inventory feed as authoritative and confirm the required quantity before releasing a purchase order.
What are suitable applications for BSC0504NSIATMA1?
BSC0504NSIATMA1 is suitable for low-voltage power switching, DC-DC conversion, synchronous rectification, load switching, and power-management circuits. Its verified 30 V rating and 21 A Ta current rating support compact designs, while the 72 A Tc rating shows the higher-current capability available under the specified case-temperature condition.
BSC0504NSIATMA1 vs VBQA1303 - which is better for high-frequency switching?
The verified comparison result indicates that BSC0504NSIATMA1 has substantially lower capacitance and gate-charge parameters than VBQA1303, including total gate charge of 5.2 nC versus 61.5 nC at 4.5 V and Miller charge of 1.4 nC versus 29 nC. BSC0504NSIATMA1 is therefore the stronger candidate for high-frequency switching when those verified dynamic values are confirmed against both manufacturers’ datasheets.
What is the difference between BSC0504NSIATMA1 and VBQA1303?
BSC0504NSIATMA1 is an Infineon 30 V N-channel MOSFET, while VBQA1303 is identified in the verified comparison result as a competing device. The supplied data states that BSC0504NSIATMA1 has much lower total gate charge and Miller charge, which can reduce gate-drive demand and switching losses. Voltage, current, package, and pin compatibility still require direct datasheet verification.
What is the best drop-in replacement for BSC0504NSIATMA1?
No five verified, same-package, pin-to-pin drop-in alternatives were identified in the supplied cross-reference data. The available search results point to cross-reference tools and the original part, but they do not establish five qualified alternatives. A replacement should therefore not be selected until its exact PG-TDSON-8-6 pinout, voltage rating, current rating, thermal performance, and gate characteristics are verified.
Can another MOSFET replace BSC0504NSIATMA1 without PCB changes?
A candidate may replace BSC0504NSIATMA1 without PCB changes only if it uses the same PG-TDSON-8-6 package, has the same pin-to-pin assignments, and meets the required electrical and thermal limits. The verified cross-reference data does not provide enough evidence to certify a drop-in alternative, so any replacement requires full manufacturer-datasheet and footprint comparison.
When should I choose BSC0504NSIATMA1 over a higher-voltage MOSFET?
Choose BSC0504NSIATMA1 when the circuit operates on a low-voltage rail and benefits from a 30 V N-channel MOSFET in a compact PG-TDSON-8-6 package. A higher-voltage device may be preferable when the drain node experiences large transients or when increased voltage margin outweighs the benefit of lower-voltage conduction and switching characteristics.
Is BSC0504NSIATMA1 suitable for automotive applications?
Automotive suitability cannot be established from the supplied verified data because no explicit AEC-Q100 qualification statement is provided. The product is associated with Infineon’s power MOSFET portfolio, but automotive use requires confirmation of qualification status, temperature grade, reliability documentation, and application approval in the official datasheet.
What should I verify before designing with BSC0504NSIATMA1?
Before design release, verify on-resistance, gate charge, gate threshold voltage, switching times, thermal resistance, safe operating area, absolute maximum ratings, and the complete pin assignment in the official Infineon datasheet. The verified data confirms the 30 V rating, current figures, power figures, technology family, and PG-TDSON-8-6 package, but not those additional parameters.
How should the thermal design handle BSC0504NSIATMA1?
Thermal design should treat 21 A at Ta and 72 A at Tc as condition-specific ratings rather than simultaneous design goals. Confirm the datasheet thermal-resistance values, calculate worst-case conduction and switching losses, and provide sufficient PCB copper, thermal vias, and cooling for the selected current. The verified Ta and Tc power ratings are 2.5 W and 30 W, respectively.
What is the pinout of BSC0504NSIATMA1?
The supplied verified data identifies the PG-TDSON-8-6 package but does not provide a pin-by-pin pinout. Therefore the exact gate, drain, source, tab, and auxiliary-pin assignments are marked as requiring datasheet verification. Use the official Infineon datasheet package drawing and land pattern before schematic or PCB layout sign-off.
What is the latest verified status of BSC0504NSIATMA1?
The verified search record is dated 2026-09-10 and includes current distributor pages, an official Infineon datasheet URL, and multiple stock or availability statements. The part should be considered active for sourcing purposes based on those records, but lifecycle status should be reconfirmed with Infineon and the selected distributor at order time.
What is the difference between Ta and Tc ratings for BSC0504NSIATMA1?
The Ta ratings are measured relative to an ambient-temperature reference, while the Tc ratings are relative to a case-temperature reference. BSC0504NSIATMA1 is verified at 21 A and 2.5 W for Ta, versus 72 A and 30 W for Tc. The Tc figures assume a controlled case-temperature condition and should not be used as ambient-current guarantees.
Which Infineon MOSFET is the best equivalent for BSC0504NSIATMA1?
The supplied verified data does not identify a qualified same-family Infineon equivalent for BSC0504NSIATMA1. The search results confirm the target’s 30 V, 21 A at Ta, 72 A at Tc, 2.5 W at Ta, 30 W at Tc, and PG-TDSON-8-6 identity, but they do not provide enough pin-level evidence to name a drop-in Infineon substitute.
Can BSC0504NSIATMA1 be used in synchronous rectification?
BSC0504NSIATMA1 is technically suitable for evaluation in low-voltage synchronous-rectification circuits because it is an N-channel MOSFET rated to 30 V and offered in a compact surface-mount package. Confirm conduction loss, body-diode behavior, gate-drive requirements, reverse-recovery characteristics, and safe operating area in the official datasheet before production use.
How can I check current BSC0504NSIATMA1 stock and price?
Check the current DigiKey, Mouser, Octopart, and other authorized distributor pages using the MPN BSC0504NSIATMA1. The verified record confirms a DigiKey “ships today” statement and a Wolfchip stock statement of 4,395 pieces, while no reliable price is provided. Recheck both inventory and price as of 2026-09-10 immediately before ordering.

工程参考数据: BSC0504NSIATMA1 ——对比、设计指导和合规信息。

选型指南

Choose BSC0504NSIATMA1 when the application needs an Infineon N-channel MOSFET for a 30 V-class switching rail and the design can use the verified PG-TDSON-8-6 surface-mount package. Its 21 A at Ta and 72 A at Tc ratings provide useful thermal-condition benchmarks, but the higher Tc figure must not be treated as an unrestricted ambient capability. Choose BSC059N04LS6ATMA1 or another same-package option when the circuit needs a higher voltage class, after confirming that the voltage increase is compatible with efficiency, gate drive, and switching-loss goals. Choose BSC014N06NSATMA1, BSZ060NE2LSATMA1, or IPT007N06NATMA1 only after full pinout, package, current, thermal, and SOA validation. IPD090N03LGATMA1 is listed as a same-package Infineon low-voltage option, but the supplied data does not provide its complete ratings. Do not approve a drop-in replacement without checking the exact datasheet values and exposed-pad layout.

与替代料对比

参数 本产品 BSC059N04LS6ATMA1 BSC014N06NSATMA1 BSZ060NE2LSATMA1 IPT007N06NATMA1 IPD090N03LGATMA1
Package PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Transistor Type N-channel MOSFET N-channel MOSFET N-channel MOSFET N-channel MOSFET N-channel MOSFET N-channel MOSFET
Drain-to-Source Voltage 30 V 40 V 60 V 60 V-class 60 V 30 V-class
Technology Family OptiMOS 5 Infineon power MOSFET Infineon power MOSFET Infineon power MOSFET Infineon power MOSFET Infineon power MOSFET

关键差异点

  • Verified low-voltage 30 V N-channel rating (对比 BSC059N04LS6ATMA1)
  • Verified higher ambient-reference current than several listed candidates (对比 BSC014N06NSATMA1)
  • Explicit high current at case-temperature reference (对比 BSC059N04LS6ATMA1)
  • Compact exposed-pad surface-mount package (对比 IPD090N03LGATMA1)

设计说明

Use the verified 21 A at Ta and 72 A at Tc ratings as separate thermal-condition benchmarks, not as interchangeable current limits. The Ta condition is more conservative for ambient design, while the Tc condition assumes the case is maintained at its specified reference point. Confirm thermal resistance and derating curves in the official datasheet, then size copper, thermal vias, and cooling from the maximum expected conduction and switching losses. Estimated: the product datasheet has not been parameterized here, so no junction-temperature rise is calculated.

The PG-TDSON-8-6 surface-mount package requires attention to the exposed pad and high-current power-loop layout. Use short, wide drain and source connections, keep the gate-drive return close to the source reference, and place any gate resistor and local supply decoupling near the device. Follow the manufacturer land pattern and exposed-pad recommendations. Because the exact pin assignment is not included in the verified data, do not route the PCB from the package name alone.

Do not assume that a 72 A case-temperature rating permits 72 A in an unrestricted ambient design. Also verify the missing on-resistance, gate charge, threshold voltage, switching times, thermal resistance, safe operating area, and absolute maximum ratings before production. The verified data confirms the 30 V voltage class, 21 A Ta, 72 A Tc, 2.5 W Ta, 30 W Tc, OptiMOS 5 family, and PG-TDSON-8-6 package, but not the complete electrical limit set.

合规信息

RoHS
Unknown
REACH
Unknown
AEC-Q100
Unknown
无铅
Unknown
无卤
Unknown
冲突矿物
Unknown

No explicit RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals statement was present in the verified web data. Automotive suitability and compliance claims must be confirmed from the official Infineon documentation.

相关搜索

BSC0504NSIATMA1 datasheet BSC0504NSIATMA1 Infineon BSC0504NSIATMA1 30V 21A MOSFET BSC0504NSIATMA1 PG-TDSON-8-6 BSC0504NSIATMA1 pinout BSC0504NSIATMA1 replacement BSC0504NSIATMA1 vs VBQA1303 BSC0504NSIATMA1 buy BSC0504NSIATMA1 stock BSC0504NSIATMA1 price BSC0504NSIATMA1 thermal design OptiMOS 5 30V MOSFET

相关元器件 & 术语

Infineon BSC0504NSIATMA1 BSC059N04LS6ATMA1 BSC014N06NSATMA1 BSZ060NE2LSATMA1 IPT007N06NATMA1 IPD090N03LGATMA1 N-channel MOSFET MOSFET power semiconductor OptiMOS 5 30 V 21 A at Ta 72 A at Tc PG-TDSON-8-6 surface mount exposed pad DC-DC converter synchronous rectification power switching thermal resistance gate charge safe operating area Infineon datasheet
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