BSC050N03LSGATMA1 vs BSZ065N03LSATMA1 对比
详细并排对比 BSC050N03LSGATMA1 出自 Infineon 和 BSZ065N03LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC050N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C | -55C to +150C (junction) |
| Channel Type | N-Channel | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 |
| Series | — | OptiMOS 30V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| 封装 / 外壳 | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |