BSC059N04LS6ATMA1 vs BSC072N08NS5ATMA1 对比

详细并排对比 BSC059N04LS6ATMA1 出自 Infineon 和 BSC072N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ 量产中

规格对比

参数 BSC059N04LS6ATMA1 BSC072N08NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.46
Technology OptiMOS 6 (N-channel MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
工作温度范围 -55C to +150C [DATA_NEEDED: full min/max operating Tj]
封装 PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Family — BSC072N08NS5 (OptiMOS 5)
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
MSL 等级 — [DATA_NEEDED: MSL rating]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

数据手册与资源

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