BSC060N10NS3GATMA1 vs BSC076N06NS3GATMA1 对比

详细并排对比 BSC060N10NS3GATMA1 出自 Infineon 和 BSC076N06NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ 量产中
Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 量产中

规格对比

参数 BSC060N10NS3GATMA1 BSC076N06NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Ta) 14.9 A —
Continuous Drain Current (ID, Tc) 90 A —
On-Resistance RDS(on) Max @ VGS=10V 6 mOhm —
Power Dissipation (PD, Tc=25C) 125 W —
Gate Threshold Voltage VGS(th) 2.0 V to 3.5 V —
工作结温 -55 C to +150 C —
Technology OptiMOS 3 (Trench MOSFET) N-Channel Trench MOSFET
封装 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] 1 (unlimited)
RoHS 状态 Compliant —
Lead-Free Yes —
无卤 [DATA_NEEDED: halogen status] Yes (per Infineon product page)
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss value] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS value] —
Product Family — OptiMOS 3
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
工作温度范围 — -55C to +150C
RoHS Compliance — Compliant

数据手册与资源

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