BSC070N10NS5ATMA1 vs BSC190N15NS3GATMA1 对比
详细并排对比 BSC070N10NS5ATMA1 出自 Infineon 和 BSC190N15NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC070N10NS5ATMA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.68 | $0.98 |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 80 A | — |
| RDS(on) max @ VGS=10V | 7 mOhm | — |
| Gate-Source Voltage (VGS) max | 20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 2.5 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissition at TC=25C (Ptot) | 83 W | — |
| Power Dissipation at TA=25C | 2.5 W | — |
| 工作结温范围 | -55 C to +150 C | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON-8 EP) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Typical Application | Synchronous rectification in SMPS | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| 工作温度范围 | — | -55 C to +150 C |