BSC076N06NS3GATMA1 vs BSC060N10NS3GATMA1 对比

详细并排对比 BSC076N06NS3GATMA1 出自 Infineon 和 BSC060N10NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 量产中
Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ 量产中

规格对比

参数 BSC076N06NS3GATMA1 BSC060N10NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
工作温度范围 -55C to +150C —
封装 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant —
无卤 Yes (per Infineon product page) [DATA_NEEDED: halogen status]
Part Family — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID, Ta) — 14.9 A
Continuous Drain Current (ID, Tc) — 90 A
On-Resistance RDS(on) Max @ VGS=10V — 6 mOhm
Power Dissipation (PD, Tc=25C) — 125 W
Gate Threshold Voltage VGS(th) — 2.0 V to 3.5 V
工作结温 — -55 C to +150 C
RoHS 状态 — Compliant
Lead-Free — Yes
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss value]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS value]

数据手册与资源

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