BSC077N12NS3GATMA1 vs BSC060N10NS3GATMA1 对比

详细并排对比 BSC077N12NS3GATMA1 出自 Infineon 和 BSC060N10NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon

BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon

BSC077N12NS3GATMA1 ✓ 量产中
Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ 量产中

规格对比

参数 BSC077N12NS3GATMA1 BSC060N10NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) OptiMOS 3
晶体管类型 N-Channel MOSFET (enhancement-mode trench) —
Drain-Source Voltage (VDS) 120 V 100 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
工作结温 -55C to +150C -55 C to +150 C
封装 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
MSL 等级 1 [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
FET Type — N-Channel
Continuous Drain Current (ID, Ta) — 14.9 A
Continuous Drain Current (ID, Tc) — 90 A
On-Resistance RDS(on) Max @ VGS=10V — 6 mOhm
Power Dissipation (PD, Tc=25C) — 125 W
Gate Threshold Voltage VGS(th) — 2.0 V to 3.5 V
Technology — OptiMOS 3 (Trench MOSFET)
Lead-Free — Yes
无卤 — [DATA_NEEDED: halogen status]
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss value]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS value]

数据手册与资源

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