BSC084P03NS3GATMA1 vs BSC060P03NS3EGATMA1 对比
详细并排对比 BSC084P03NS3GATMA1 出自 Infineon 和 BSC060P03NS3EGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ 量产中规格对比
| 参数 | BSC084P03NS3GATMA1 | BSC060P03NS3EGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.24 | $0.38 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | -30 V |
| Continuous Drain Current (Ta) | 14.9 A | 17.7 A |
| Continuous Drain Current (Tc) | 78.6 A | 100 A |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | — |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | — |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | — |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | — |
| Input Capacitance (Ciss) | 3.19 nF | — |
| Output Capacitance (Coss) | 110 pF | — |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 69 W | 83 W |
| 工作温度范围 | -55C to +150C | -55°C to +150°C |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited) | — |
| Polarity | — | P-Channel |
| On-State Resistance RDS(on) max @ VGS=10V | — | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | — | 81 nC |
| Input Capacitance Ciss | — | 6.02 nF |
| Output Capacitance Coss | — | 2.81 nF |
| Reverse Transfer Capacitance Crss | — | 220 pF |
| Technology | — | OptiMOS™ P-channel Trench |