BSC0902NSIATMA1 vs BSC023N08NS5SCATMA1 对比
详细并排对比 BSC0902NSIATMA1 出自 Infineon 和 BSC023N08NS5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ 量产中规格对比
| 参数 | BSC0902NSIATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| 工作温度范围 | -55C to +150C (junction) | — |
| 封装 | PG-TDSON-8-6 (TDSON-8) | PG-WSON-8-2 (SuperSO8 DSC) |
| 安装类型 | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Part Number | — | BSC023N08NS5SCATMA1 |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Power Dissipation (PD, Tc=25°C) | — | 188 W |
| On-State Resistance RDS(on) typ. | — | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | — | 3.8 V |
| Total Gate Charge Qg | — | 98 nC at VGS=10 V |
| Input Capacitance Ciss | — | 6.8 nF |
| Output Capacitance Coss | — | 74 pF |
| Thermal Resistance RthJC | — | 0.72 K/W |
| 工作结温 | — | -55 °C to +175 °C |