BSC0906NSATMA1 vs BSC030N03LSGATMA1 对比
详细并排对比 BSC0906NSATMA1 出自 Infineon 和 BSC030N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC0906NSATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.38 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| Continuous Drain Current (ID) at Tc | 63 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| 封装 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS | — |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | — |
| 工作温度范围 | -55C to +150C (junction, typical) | — |
| 引脚数量 | 8 | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | — | 23 A |
| RDS(on) Max @ VGS=10V | — | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | — | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | — | 55 nC |
| Output Charge (Qoss) | — | 66 pF |
| Input Capacitance (Ciss) Typ | — | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | — | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | — | 69 W |
| 工作结温 | — | -55C to +150C |
| MSL 等级 | — | 1 |
| Avalanche Rated | — | Yes (100% tested) |