BSC0906NSATMA1 vs BSC030N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC030N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveInfineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0906NSATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| Continuous Drain Current (ID) at Tc | 63 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS | β |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | β |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | β | 23 A |
| RDS(on) Max @ VGS=10V | β | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | β | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | β | 55 nC |
| Output Charge (Qoss) | β | 66 pF |
| Input Capacitance (Ciss) Typ | β | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | β | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Avalanche Rated | β | Yes (100% tested) |