BSC094N06LS5ATMA1 vs IPD060N03LGATMA1 对比
详细并排对比 BSC094N06LS5ATMA1 出自 Infineon 和 IPD060N03LGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| 工作结温 | -55 °C to +150 °C | -55C to +175C |
| 封装 | PG-TDSON-8-6 (SuperSO8 5x6) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (Unlimited) |
| Product Family | — | OptiMOS 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | — | 200 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | — | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | — | 21 nC |
| Output Charge (Qoss, typ) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | — | 56 W |
| Thermal Resistance Junction-to-Case (RthJC, max) | — | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | — | 62 C/W |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Packing | — | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | — | Not qualified |
| Technology / Generation | — | OptiMOS 30V, trench MOSFET |