BSC094N06LS5ATMA1 vs IPD060N03LGATMA1 비교
다음의 상세 나란히 비교: BSC094N06LS5ATMA1 제조: Infineon 및 IPD060N03LGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| 동작 접합 온도 | -55 °C to +150 °C | -55C to +175C |
| 패키지 | PG-TDSON-8-6 (SuperSO8 5x6) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 1 (Unlimited) |
| Product Family | — | OptiMOS 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | — | 200 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | — | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | — | 21 nC |
| Output Charge (Qoss, typ) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | — | 56 W |
| Thermal Resistance Junction-to-Case (RthJC, max) | — | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | — | 62 C/W |
| 패키지 / 케이스 | — | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Packing | — | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | — | Not qualified |
| Technology / Generation | — | OptiMOS 30V, trench MOSFET |