BSC123N08NS3GATMA1 vs BSC033N08NS5SCATMA1 对比
详细并排对比 BSC123N08NS3GATMA1 出自 Infineon 和 BSC033N08NS5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC123N08NS3GATMA1 | BSC033N08NS5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg typical value] |
| Power Dissipation (Tc) | 66 W | 136 W |
| Power Dissipation (Ta) | 2.5 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-WSON-8-2 (SuperSO8 DSC) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Tc) | — | 144 A |
| RDS(on) max @ VGS=10V | — | 3.3 mOhm |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Thermal Resistance RthJC | — | 0.86 K/W |
| 工作温度范围 | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5) |