BSC12DN20NS3GATMA1 vs BSC011N03LSTATMA1 对比
详细并排对比 BSC12DN20NS3GATMA1 出自 Infineon 和 BSC011N03LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC12DN20NS3GATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 30 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| 封装 | PG-TDSON-8-5 | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | Trench MOSFET |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | Single with built-in diode |
| 引脚数量 | 8 | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| 工作结温 | — | -55C to +150C |