BSC12DN20NS3GATMA1 vs BSC011N03LSTATMA1 Comparison
Detailed side-by-side comparison of BSC12DN20NS3GATMA1 by Infineon and BSC011N03LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC12DN20NS3GATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | NRND |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 30 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| Package | PG-TDSON-8-5 | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | Trench MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | Single with built-in diode |
| Pin Count | 8 | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 39 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 72 nC |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 115 W |
| Operating Junction Temperature | — | -55C to +150C |