BSC360N15NS3GATMA1 vs BSC098N10NS5ATMA1 对比

详细并排对比 BSC360N15NS3GATMA1 出自 Infineon 和 BSC098N10NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC360N15NS3GATMA1 BSC098N10NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.55
Manufacturer Infineon Technologies —
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
封装 PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
工作温度范围 -55°C to +150°C (junction) [DATA_NEEDED: Tj min/max]
Avalanche Energy Rated Yes —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 1 1
Continuous Drain Current (ID, Tc=25C) — 60 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc=25C) — 69 W
Power Dissipation (Ta) — 2.5 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
Shipping Packaging — Tape & Reel (T/R)

数据手册与资源

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