BSF134N10NJ3GXUMA1 vs IPD068N10N3GATMA1 对比
详细并排对比 BSF134N10NJ3GXUMA1 出自 Infineon 和 IPD068N10N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSF134N10NJ3GXUMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| 封装 | MG-WDSON-2 (CanPAK M) | PG-TO252-3 (DPAK, 2 leads + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Single |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| 工作温度范围 | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| Technology | Trench-gate OptiMOS planar | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| 工作结温 | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |