BSF134N10NJ3GXUMA1 vs IPD068N10N3GATMA1 Comparison
Detailed side-by-side comparison of BSF134N10NJ3GXUMA1 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveInfineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | BSF134N10NJ3GXUMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25Β°C | 9 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.2 W | β |
| Power Dissipation (PD) at TC=25Β°C | 43 W | β |
| Package | MG-WDSON-2 (CanPAK M) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Single |
| Terminal Position | Bottom | β |
| Terminal Finish | Silver Nickel | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Technology | Trench-gate OptiMOS planar | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | β |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | β |
| Part Number | β | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| On-Resistance RDS(on) max | β | 6.8 mOhm |
| Power Dissipation (PD) at Tc | β | 150 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 4.0 V (typical) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Channel Type | β | N-Channel |
| Packing | β | Tape & Reel (T/R) |
| Qualification | β | Industrial (non-automotive) |