BSL308CH6327XTSA1 vs BSL308PEH6327XTSA1 对比
详细并排对比 BSL308CH6327XTSA1 出自 Infineon 和 BSL308PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSL308CH6327XTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | Dual, common source |
| 封装 | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-TSOP6-6 (TSOT-23-6) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| 工作温度范围 | -55 °C to +150 °C | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes (per Infineon product family convention) | — |
| Series | — | OptiMOS |
| FET Type | — | 2x P-Channel (Dual) |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| 工作温度 | — | -55 C to +150 C (TJ) |
| Automotive Qualification | — | AEC-Q101 |
| 引脚数 | — | 6 |
| Channel Mode | — | Enhancement |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |