BSO613SPVGXUMA1 vs BSD214SNH6327XTSA1 对比
详细并排对比 BSO613SPVGXUMA1 出自 Infineon 和 BSD214SNH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSO613SPVGXUMA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.27 |
| FET Type | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 封装 | PG-DSO-8-6 (Power-SO-8) | SOT-363 (PG-SOT363-PO), 6-pin |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | MOSFET (Metal Oxide), OptiMOS |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 工作温度范围 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C (junction) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | — |
| MSL 等级 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 引脚数量 | 8 (6 active, 2 thermal/NC) | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |