BSO613SPVGXUMA1 vs BSD214SNH6327XTSA1 비교
다음의 상세 나란히 비교: BSO613SPVGXUMA1 제조: Infineon 및 BSD214SNH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSO613SPVGXUMA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $0.27 |
| FET Type | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 패키지 | PG-DSO-8-6 (Power-SO-8) | SOT-363 (PG-SOT363-PO), 6-pin |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | MOSFET (Metal Oxide), OptiMOS |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 동작 온도 범위 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C (junction) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | — |
| MSL 레벨 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 핀 수 | 8 (6 active, 2 thermal/NC) | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |