BSP125H6327XTSA1 vs BSP89H6327XTSA1 对比
详细并排对比 BSP125H6327XTSA1 出自 Infineon 和 BSP89H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSP125H6327XTSA1 | BSP89H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP125H6327XTSA1 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET, enhancement mode |
| Technology | SIPMOS (Small Signal Power MOSFET) | SIPMOS (planar power MOS) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| 封装 | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (Unlimited) | — |
| Qualification | Automotive / Industrial grade | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | — | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | — | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | — | 6 Ω (typical) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| 工作温度范围 | — | -55 °C to +150 °C (Tj) |
| Thermal Resistance Junction-Ambient (RthJA) | — | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | — | 25 K/W |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| dv/dt Rated | — | Yes |
| ESD Protection | — | Internal gate-source Zener |
| Automotive Qualification | — | AEC-Q101 (per ordering code H6327) |