BSP125H6327XTSA1 vs BSP89H6327XTSA1 比較
詳細な並列比較: BSP125H6327XTSA1 メーカー: Infineon および BSP89H6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSP125H6327XTSA1 | BSP89H6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.38 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP125H6327XTSA1 | — |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET, enhancement mode |
| Technology | SIPMOS (Small Signal Power MOSFET) | SIPMOS (planar power MOS) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| パッケージ | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (Unlimited) | — |
| Qualification | Automotive / Industrial grade | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | — | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | — | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | — | 6 Ω (typical) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| 動作温度範囲 | — | -55 °C to +150 °C (Tj) |
| Thermal Resistance Junction-Ambient (RthJA) | — | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | — | 25 K/W |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| dv/dt Rated | — | Yes |
| ESD Protection | — | Internal gate-source Zener |
| Automotive Qualification | — | AEC-Q101 (per ordering code H6327) |