BSP129H6327XTSA1 vs BSR316PH6327XTSA1 对比
详细并排对比 BSP129H6327XTSA1 出自 Infineon 和 BSR316PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSP129H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.30 | $0.22 |
| FET Type | N-Channel, Depletion Mode | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 240 V | -100 V |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| 封装 | PG-SOT223-4 (SOT-223, 3+Tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +150 C (junction) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | — |
| dv/dt Ruggedness | Yes (rated) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| Process Technology | SIPMOS (vertical DMOS) | — |
| Drain Terminal | Tab (pin 4) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| 工作温度范围 | — | -55 C to +150 C (junction) |
| Qualification | — | Automotive |
| Polarity | — | P-Channel |