BSP295H6327XTSA1 vs BSS214NWH6327XTSA1 对比

详细并排对比 BSP295H6327XTSA1 出自 Infineon 和 BSS214NWH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP295H6327XTSA1 BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 ✓ 量产中
Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 量产中

规格对比

参数 BSP295H6327XTSA1 BSS214NWH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.35 $0.15
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Ta=25 °C 1.8 A —
Power Dissipation (PD) at Ta=25 °C 1.8 W —
Drain-Source On-Resistance RDS(on) max 300 mΩ —
封装 PG-SOT223-4 (3 leads + tab) PG-SOT323 (SOT-323-3)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +150 °C —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS 状态 Compliant Compliant
Tape and Reel Packing Code H6327 (7-inch reel) —
Channel Mode Enhancement —
Technology Planar N-channel MOSFET MOSFET (Metal Oxide)
Drain Tab Connection Pin 4 (tab) —
Manufacturer — Infineon Technologies
Part Number — BSS214NWH6327XTSA1
Series — OptiMOS
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) @ 25C — 1.5 A
Rds(on) Max @ Vgs=4.5V — 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) — 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C — 500 mW
工作温度 — -55C to +150C (junction)
Lead-Free — Yes

数据手册与资源

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