BSP772TXUMA1 vs BSP125H6433XTMA1 对比

详细并排对比 BSP772TXUMA1 出自 Infineon 和 BSP125H6433XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ 量产中

规格对比

参数 BSP772TXUMA1 BSP125H6433XTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.97 $1.05
Manufacturer Infineon Technologies —
Series Classic PROFET —
Switch Type General Purpose —
输出数量 1 —
Ratio - Input:Output 1:1 —
输出配置 High Side —
输出类型 N-Channel —
Continuous Load Current 2.6 A —
On-State Resistance (typ) [DATA_NEEDED: RDS(on) typical value] —
工作电源电压 5 V to 34 V (load supply) —
Input Voltage (IN pin) TTL/CMOS compatible logic —
Protection Features Over-current, Over-temperature, Over-voltage clamp, ESD, Short-circuit —
Fault Feedback Open-drain STATUS pin —
封装 PG-DSO-8-6 (8-SOIC with exposed pad) PG-SOT223-4 (3+tab)
安装类型 Surface Mount Surface Mount
MSL 等级 3 (168 hours) —
工作温度 -40C to +150C (junction) —
RoHS 状态 Compliant Compliant
REACH Status REACH Unaffected —
ECCN EAR99 —
FET Type — N-Channel Enhancement Mode
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (ID) at TA — 120 mA
Power Dissipation (PD) at TA — 1.8 W
Automotive Qualification — AEC-Q101
Lead Plating — Pb-free
工作温度范围 — -55C to +150C (TJ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA on standard PCB]
Configuration — Single N-Channel MOSFET

数据手册与资源

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