BSP772TXUMA1 vs BSP89H6327XTSA1 对比

详细并排对比 BSP772TXUMA1 出自 Infineon 和 BSP89H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 ✓ 量产中

规格对比

参数 BSP772TXUMA1 BSP89H6327XTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.97 $0.39
Manufacturer Infineon Technologies —
Series Classic PROFET —
Switch Type General Purpose —
输出数量 1 —
Ratio - Input:Output 1:1 —
输出配置 High Side —
输出类型 N-Channel —
Continuous Load Current 2.6 A —
On-State Resistance (typ) [DATA_NEEDED: RDS(on) typical value] —
工作电源电压 5 V to 34 V (load supply) —
Input Voltage (IN pin) TTL/CMOS compatible logic —
Protection Features Over-current, Over-temperature, Over-voltage clamp, ESD, Short-circuit —
Fault Feedback Open-drain STATUS pin —
封装 PG-DSO-8-6 (8-SOIC with exposed pad) PG-SOT223-4 (SOT-223, 4-pin with tab)
安装类型 Surface Mount Surface Mount
MSL 等级 3 (168 hours) —
工作温度 -40C to +150C (junction) —
RoHS 状态 Compliant Compliant
REACH Status REACH Unaffected —
ECCN EAR99 —
晶体管类型 — N-Channel MOSFET, enhancement mode
Technology — SIPMOS (planar power MOS)
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
工作温度范围 — -55 °C to +150 °C (Tj)
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
Automotive Qualification — AEC-Q101 (per ordering code H6327)

数据手册与资源

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