BSS127H6327XTSA2 vs BSD214SNH6327XTSA1 对比

详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSD214SNH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 量产中
Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 量产中

规格对比

参数 BSS127H6327XTSA2 BSD214SNH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.27
FET Type N-Channel SIPMOS, enhancement mode N-Channel
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
工作结温 -55 C to +150 C —
封装 SOT-23-3 (PG-SOT23) SOT-363 (PG-SOT363-PO), 6-pin
安装类型 Surface Mount Surface Mount
引脚数量 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS 状态 Compliant (lead-free) Compliant
无卤 Yes, per IEC 61249-2-21 —
MSL 等级 [DATA_NEEDED: MSL rating] 1
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
工作温度范围 — -55C to +150C (junction)
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

数据手册与资源

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