BSS138NH6327XTSA2 vs BSS119NH6327XTSA1 对比

详细并排对比 BSS138NH6327XTSA2 出自 Infineon 和 BSS119NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 量产中
Infineon
BSS119NH6327XTSA1 BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 ✓ 量产中

规格对比

参数 BSS138NH6327XTSA2 BSS119NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.15 $0.12
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
封装 PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj max and operating range] -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
无卤 Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel Tape & Reel (3,000 pcs/reel)
晶体管类型 — N-Channel MOSFET
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Threshold Voltage (VGS(th)) — 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
Gate Drive Voltage (VGS) — ±20 V max
Qualification — AEC-Q101 (automotive grade)
RoHS 状态 — Compliant
Lead-Free — Yes
MSL 等级 — 1 [DATA_NEEDED: confirm from datasheet]

数据手册与资源

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