BSS205NH6327XTSA1 vs BSR802NL6327HTSA1 对比

详细并排对比 BSS205NH6327XTSA1 出自 Infineon 和 BSR802NL6327HTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 量产中
Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ 量产中

规格对比

参数 BSS205NH6327XTSA1 BSR802NL6327HTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.15
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS205NH6327XTSA1 BSR802NL6327HTSA1
晶体管类型 N-Channel MOSFET —
封装 PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SC59-3 (SC-59 / SOT-346)
安装类型 Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
工作温度范围 -55 °C to +150 °C (junction) —
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 Automotive
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
Technology — OptiMOS 2 (N-Channel Trench MOSFET)
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
工作结温 — -55C to +150C
RoHS 状态 — Compliant
引脚数量 — 3

数据手册与资源

浏览全部产品 创建 BOM 获取报价