BSS205NH6327XTSA1 vs BSS87H6327FTSA1 对比

详细并排对比 BSS205NH6327XTSA1 出自 Infineon 和 BSS87H6327FTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 量产中
Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ 量产中

规格对比

参数 BSS205NH6327XTSA1 BSS87H6327FTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.18
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
晶体管类型 N-Channel MOSFET —
封装 PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT89-4-2 (SOT-89)
安装类型 Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
工作温度范围 -55 °C to +150 °C (junction) -55C to +150C (junction)
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
FET Type — N-Channel enhancement-mode
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 260 mA (Ta)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
引脚数量 — 3 (Gate / Drain / Source)
Automotive Qualification — AEC-Q101 qualified
RoHS 状态 — Compliant
Lead-Free / Pb-Free — Yes (Pb-free plating)
MSL 等级 — 1 (per JEDEC J-STD-020)
Process Technology — Vertical DMOS

数据手册与资源

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