BSS316NH6327XTSA1 vs BSS314PEH6327XTSA1 对比
详细并排对比 BSS316NH6327XTSA1 出自 Infineon 和 BSS314PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS316NH6327XTSA1 | BSS314PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $0.15 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS 2 (Trench) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| 工作结温范围 | -55 C to +150 C | — |
| 封装 | PG-SOT23 (SOT-23-3) | PG-SOT23-3 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) @ TA=25C | — | -1.5 A |
| Power Dissipation (PD) @ TA=25C | — | 500 mW |
| RDS(on) max @ VGS=-10V | — | 140 mOhm |
| RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at -4.5V VGS] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (max Rds(on)) | — | -4.5 V, -10 V |
| 工作温度范围 | — | -55 C to +150 C (TJ) |
| Qualification | — | AEC-Q101 (Automotive) |
| Pin Configuration | — | G-D-S (Gate, Drain, Source) |