BSS316NH6327XTSA1 vs BSS314PEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS316NH6327XTSA1 von Infineon und BSS314PEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS316NH6327XTSA1 | BSS314PEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,15 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS 2 (Trench) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-SOT23-3 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) @ TA=25C | — | -1.5 A |
| Power Dissipation (PD) @ TA=25C | — | 500 mW |
| RDS(on) max @ VGS=-10V | — | 140 mOhm |
| RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at -4.5V VGS] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (max Rds(on)) | — | -4.5 V, -10 V |
| Betriebstemperaturbereich | — | -55 C to +150 C (TJ) |
| Qualification | — | AEC-Q101 (Automotive) |
| Pin Configuration | — | G-D-S (Gate, Drain, Source) |