BSZ036NE2LSATMA1 vs BSZ011NE2LS5IATMA1 对比
详细并排对比 BSZ036NE2LSATMA1 出自 Infineon 和 BSZ011NE2LS5IATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ036NE2LSATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $0.55 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| 封装 | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作温度范围 | -55C to +150C | -55°C to +150°C |
| MSL 等级 | 1 (Unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (Trench) |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| 无卤 | — | Yes |